• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to an ink, capable of forming a P-type layer in an organic electronic device, characterized in that it comprises at least P-type semiconductor metal oxide nanoparticles and a ionomer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) semiconducting type P being between 0.005 and 0.115. It also relates to a layer P of an organic electronic device, an electronic device and its forming method.
    公开号:FR3013719A1
    申请号:FR1361621
    申请日:2013-11-26
    公开日:2015-05-29
    发明作者:Matthieu Manceau；Solenn Berson
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] The present invention relates to the field of organic electronic devices such as organic photovoltaic cells, organic light-emitting diodes (OLEDs) and organic photodetectors (OPDs). These devices consist of a first and a second electrode, respectively disposed above and below a stack of several layers including in particular a so-called "active" layer adjacent to a so-called "P-type" layer and a "N-type" layer. The object of the invention is to provide an improved P-type layer, and in this respect advantageous for accessing organic electronic devices, whose thermal and air stability is improved and which has high performances. Organic electronic devices, and in particular organic photovoltaic cells, are generally classified according to the structure of their architecture: standard or inverse.
    [0002] In a standard structure, the layers are deposited in the following order: a substrate; conductive layer as the first electrode (anode); - P-type semiconductor layer called "hole transport layer"; - electrically active layer; - N-type semiconductor layer called "electron transport layer"; and conductive layer as a second electrode (cathode). In a reverse structure, the stack is inverted and the layers are arranged in the following sequence: a substrate; conductive layer as first electrode (cathode); an N-type semiconductor layer called an "electron transport layer"; an electrically active layer; a P type semiconductor layer called a "hole transport layer"; - second electrode (anode) or upper electrode.
    [0003] Generally, the P-type semiconductor layers considered in these structures are formed essentially from a mixture of two polymers, poly (3,4-ethylenedioxythiophene) (PEDOT) and poly (styrene sulfonate). ) sodium (PSS) said PEDOT: PSS. As such, these layers have the property of being hydrophilic. This material has many advantages in terms of conductivity, transparency, stability including photochemical and oxidation.
    [0004] Moreover, the electrically active layers, conventionally considered in these structures, consist of a mixture containing at least two semiconductor materials: an N-type material, an electron acceptor, and a P-type material, which is a donor. electrons (hole transporter). These active layers are therefore generally hydrophobic.
    [0005] There is, of course, an incompatibility between these two types of layers. This lack of affinity also has the consequence of making it difficult to carry out their stacking. In addition, the fact that this material PEDOT: PSS is obtained from a complex formulation of two polymers and several solvents and additives, is not conducive to adjustments. It is indeed difficult to intervene at the level of the formulation without fear of destabilizing it. P-type semiconductor metal oxides, such as, for example, V205, NiO, MoO3 and WO3, in the form of nanoparticles, may constitute an alternative to the use of PEDOT: PSS. These metal oxides are also generally very transparent, and may have good wettability and strong adhesion to the active layer. In addition, their reduced conductivity can be perfectly compensated by reducing the thickness of the final layer. Thus, the use of WO3 makes it possible to achieve very high initial performances. Unfortunately, it has two major disadvantages: very rapid degradation to air even in the absence of light, and poor thermal stability. In both cases, this leads to a sharp drop in the performance of the device which implements particles of WO3 as components of the layer P. Consequently, there remains a need for a solution that makes it possible to obtain a particularly stable P-type layer, especially in air, heat and moisture. The present invention precisely aims to meet this need.
    [0006] The object of the invention is to propose an improved solution for producing a P layer and more generally for producing organic electronic devices and consequently improved modules in terms of stability, performance and service life. The invention also aims to propose a method for preparing an organic electronic device, in which the implementation of the P-type layer is facilitated in particular with respect to that of P-type layers in PEDOT: PSS. Thus, the main subject of the present invention is an ink, capable of forming a P type layer in an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconducting of the P type and an ionomer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.005 and 0.115. Preferably, the weight ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.01 and 0.055.
    [0007] Advantageously, the nanoparticles of P type semiconducting metal oxide (s) are chosen from V205, NiO, MoO3, WO3 and their mixtures, and preferably are formed in whole or in part of WO3. According to another of its aspects, the present invention relates to a P-type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconducting type P and an ionomer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) semiconductor P type is between 0.005 and 0.115. According to yet another of its aspects, the present invention is an organic electronic device comprising a P-type layer as defined above.
    [0008] According to yet another of its aspects, the present invention relates to the use of nanoparticles of WO3 to form a P-type layer in an organic electronic device, characterized in that said nanoparticles are formulated with at least one ionomer in said layer of type P in a mass ratio ionomer / nanoparticles of WO3 between 0.005 and 0.115.
    [0009] Against all expectations, the inventors have thus found that the use, during the manufacture of an organic electronic device, of P-type semiconductor metal oxide nanoparticles such as WO 3 in a combined form. an ionomer is particularly advantageous. Such a combination indeed makes it possible to access a P type layer exhibiting properties in terms of thermal and air stability, significantly improved compared to a P type layer formed from the same nanoparticles of WO 3 but in a form not combined with an ionomer. These advantages are more particularly illustrated in the examples described below. Moreover, the other expected properties, namely uniformity and homogeneity of the layer P on the active layer, and performance in OPV cells, are furthermore unaltered by such a combination.
    [0010] The organic electronic device according to the invention may be an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector (OPD), in standard or inverse structure (NIP). Other advantages and features will appear on reading the description and examples which follow.
    [0011] DETAILED DESCRIPTION As already mentioned, the ink according to the invention comprises at least nanoparticles of P-type semiconducting metal oxide (s) and an ionomer. The mass ratio between the ionomer and the nanoparticles of P-type semiconductive metal oxide (s) is between 0.005 and 0.115. Preferably, the weight ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.01 and 0.055. The nanoparticles of P-type semiconductive metal oxide (s) are advantageously chosen from the following metal oxides: V205, NiO, MoO3, WO3 and their mixtures. Preferably, the P-type semiconductor metal oxide nanoparticles are formed wholly or partly of WO 3. They have a size advantageously between 2 nm and 200 nm. By "size" is preferably meant the largest dimension of the particles.
    [0012] According to a particular embodiment, the nanoparticles of metal oxide (s) semiconducting type P can be in the form of hydrates.
    [0013] Preferably, the amount of P-type semiconducting metal oxide nanoparticles ranges from 90% to 99.5%, preferably from 95% to 99% by weight, relative to the total weight of the nanoparticles. P-type semiconducting metal oxide (s) and ionomer (s).
    [0014] For the purposes of the present invention, the term "ionomer" means a synthetic polymer, homopolymer or copolymer, comprising ionic or ionizable groups such as carboxylate, sulphonate or phosphonate functions. It can also be called "ionic polymer". Preferably, the ionomer used according to the invention is a perfluorosulphonated copolymer, and in particular a sulfonated tetrafluoroethylene copolymer. More preferably, the ionomer is a tetrafluoroethylene backbone copolymer comprising perfluorovinyl ether groups and the terminal ends of which are functionalized with sulphonate groups or sulphonic acid functional groups.
    [0015] Advantageously, the ionomer used according to the invention is Nafion® sold by Dupont. Preferably, the amount of ionomer (s) ranges from 0.5% to 10%, preferably from 1% to 5% by weight, relative to the total weight of the nanoparticles of semi-metallic oxide (s). P-type conductors and ionomer (s).
    [0016] In particular, an ink according to the invention may comprise from 0.5% to 20% by weight of dry matter relative to the total weight of the ink. By "dry material" is meant the constituents of the ink with the exception of the solvent that is to say essentially the nanoparticles of metal oxide (s) semiconducting type P and the ionomer.
    [0017] An ink according to the invention may further comprise an alcoholic solvent, in particular a lower alcohol, preferably a C 2 -C 4 lower monoalcohol and in particular ethanol, n-propanol, isopropanol, n-propanol and the like. butanol, 2-butanol or methylpropanol. In particular, an ink according to the invention may comprise from 80% to 99.5% by weight of alcoholic solvent relative to the total weight of the ink. The ink is generally formulated without surfactant During the formulation of the ink, after mixing the nanoparticles of metal (s) P-type semiconducting metal (s) and the ionomer, several post-treatments can be carried out such treatments capable of homogenizing the mixture or to sediment the secondary particles. More specifically, these treatments may consist of agitation or centrifugation. As stated above, the ink thus formed is useful for constituting the P layer of an organic electronic device. Thus, according to another of its aspects, the present invention relates to a P-type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) semiconductor semiconductors. type P and an ionomer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles is between 0.005 and 0.115, and preferably between 0.01 and 0.055. In general, the layer P may be formed by depositing the ink layer on the surface of the substrate in question by any wet process such as solution coating, dipping, inkjet printing, centrifugal coating, dip coating, roller coating, spray coating. The deposit will be implemented by spin-coating, by strip casting, for example by scraping ("doctor bleading" in English), soaking, spin coating, slot dye, jet spray. ink, by gravure or by screen printing. The thickness of the layer can be controlled during the deposition. Indeed, the constituents of the expected layer P being dissolved in a liquid, the fluid layer can be spread on the support in a thin film. After the deposition, a drying step is advantageously carried out.
    [0018] The solvent (s) of the ink can be easily evaporated during this drying step. This step is in particular carried out at a temperature ranging from 80 ° C. to 140 ° C. for a period ranging from 1 minute to 30 minutes. It is of course possible to proceed with the formation of the layer P via the superposition of several layers of ink according to the invention.
    [0019] In general, the thickness of the layer P according to the invention, further represented by the gap existing between the layers which surround said layer P, varies from 0.01 microns to approximately 50 microns. Preferably, the thickness of the layer P is less than 20 microns, preferably less than 5 microns, and preferably less than 1 micron. Even more preferably, the thickness of the layer P is between 0.05 microns and 0.1 microns. The invention also relates to a method of forming a P-type layer in an organic electronic device comprising the following steps: - having a support; - Have an ink according to the invention; depositing an ink layer on the surface of said support; and, where appropriate, drying of this layer to form the P-layer. Depending on the architecture of the cell that it is desired to obtain: standard or inverse structure, the support is respectively an anode type electrode or an active layer. The deposition of the ink on the support can be carried out by any suitable wet process. The ink deposit is then dried or allowed to dry.
    [0020] The present invention also relates to an organic electronic device, characterized in that it comprises a P-type layer as defined above. An organic electronic device according to the invention has a standard structure or a reverse structure. As mentioned previously, it may be an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector (OPD). The invention also relates to a method of forming an organic electronic device, characterized in that it comprises a step of depositing an ink layer as defined above under conditions conducive to the formation of a layer of the type P.
    [0021] According to a first variant, the present invention relates to a method of forming an organic electronic device in reverse structure comprising the following steps: - to have a stack composed of the following layers in this order: substrate, cathode, N-type layer, active layer; depositing on said active layer, an ink layer according to the invention under conditions conducive to the formation of a P-type layer. Next, an anode, and preferably an electrode, is superimposed on this P-type layer. silver.
    [0022] According to a second variant, the present invention relates to a method of forming an organic electronic device in standard structure comprising the following steps: - to have a substrate coated with an electrode (anode), - to deposit on said anode, a layer according to the invention under conditions conducive to the formation of a P type layer. In general, it is then superimposed successively on this P type layer, the following layers: an active layer, a layer N-type, a cathode. EXAMPLES Example 1: Formulation of an Ink An ink is prepared from a commercial dispersion of WO3 nanoparticles (2.5% by weight, without surfactant, 2-propanol base, particle size 10-20 nm, crystalline structure triclinic) distributed by the company Nanograde Llc and a commercial formulation of Nafion® (solution of Nafion® 117 at -5% dry matter, marketed by Sigma-Aldrich). The ink thus formed comprises 96.5% by weight of isopropanol, 1% by weight of n-propanol, 2.45% by weight of WO 3 and 0.1% by weight of Nafion®. Example 2: Use of the ink according to Example 1 to form a layer P The organic electronic device under consideration is a NIP device (reverse) structure as follows: Silver Layer P Active layer Layer N Conductive oxide PET substrate Its N layer is a layer of zinc oxide (ZnO) and its active layer is a polymeric / [6,6] -phenyl-C61-methyl butyrate (PCBM) layer. The ink of Example 1 dedicated to forming the layer P, at the surface of the active layer of the stack, is applied by spin coating, spin coating ("spincoating") and dried, at a temperature of 120 ° C. C for 2 minutes. The layer P thus formed contains 4% by weight of Nafion® and 96% by weight of WO 3. The silver electrode is then formed on its surface. The active surface of the devices is 0.28 cm 2. In the same way, a NIP device (reverse) of the same structure, but control, is formed with a P layer comprising only WO3. The ink used to form this layer P comprises 97.5% by weight of isopropanol and 2.5% by weight of WO 3. The corresponding layer P then contains 100% by weight of WO 3. Example 3: Device Performance and Stability The performance of the PIN (reverse) devices of Example 2 were measured at 25 ° C under inert atmosphere under standard illumination conditions (1000 W / m2, AM 1). , 5G). The tested parameters are: Voc: open circuit voltage; Jsc: short circuit current density; FF: "Fill factor" in English language: filling factor; PCE: "Power Conversion Efficiency" in English: power conversion efficiency. These parameters are tested according to the protocols described in Perrier et al., Solar Energy Materials and Solar Cells, June 2012, Vol. 101, Pages 210-216.
    [0023] Table 1 below shows the performance of the device with a P layer according to the invention. Table 2 reports the performance of the control device. - Performance 1: initial performance of the device under consideration; - Performance 2: performance of the device considered after exposure to air for 2 hours, in the absence of light; and - Performance 3: performance of the device under consideration after heat treatment for 2 minutes at 150 ° C. in a glove box. Table 1 (Device according to the invention) PV layer, (mA cmJsc FF (%) PCE (%) Ato (mo10) Performance 751.6 12.6 48.8 4.6 / 1 Performance 763.0 12.9 48 , 2 4.7 +2% 2 Performance 764.3 14.3 48.7 5.3 +15% 3 Table 2 (Control device) PV layer, (mA cmJsc FF (%) PCE (%) Ato (mo10) Performance 715.2 13.5 55.4 5.3 / 1 Performance 672.1 11.4 35.4 2.7 - 50% 2 Performance 382.6 5.2 20.2 0.4 - 90% 3 For a device having a P layer according to the invention, the beneficial effect of Nafion® appears clearly after exposure to air for 2 hours, in the absence of light, since the efficiency of the cells does not decrease.
    [0024] Similarly, it is noted that after a heat treatment for 2 minutes at 150 ° C. in a glove box, an increase in the yield demonstrating that the initial performances are optimized. The beneficial effect of Nafion® is therefore verified.
    [0025] Conversely, with regard to the control device, it is clearly seen that the efficiency of the cells decreases significantly, in the absence of light, after exposure to air for 2 hours. In addition, after a heat treatment for 2 minutes at 150 ° C in a glove box, their performance is virtually zero.
    [0026] Example 4: Nafion concentration range in combination with WO3 On the other hand, the initial performance of the devices are evaluated according to the Nafion / W03 mass ratio within the dry layer. The test parameters are identical to those of example 3.
    [0027] The results are detailed in Table 3 below. Table 3 Voc ratio Jsc FF (%) PCE (%) by mass (mV) (mA cm-2) Nafionc) / W03 in the dry layer 1,751 5.3 20.9 0.8 0.25 725 8.0 29 , 7 1.7 0.11 754 11.6 55.1 4.8 0.053 733 12.6 54.8 5.0 0.042 754 12.6 52.8 5.0 0.02 716 12.9 58.3 5, 4 0.01 720 13.2 58.6 5.6 When the weight ratio Nafion / W03 is between 0.01 and 0.11, the performances of the devices are very good. On the contrary, when the Nafion / W03 mass ratio within the dry layer is equal to 0.25 or 1, the performances of the devices are poor.
    权利要求:
    Claims (14)
    [0001]
    REVENDICATIONS1. Ink, capable of forming a P-type layer in an organic electronic device, characterized in that it comprises at least nanoparticles of P-type semiconductor metal oxide (s) and an ionomer, the mass ratio between the ionomer and the P-type semiconductor metal oxide nanoparticles (s) being between 0.005 and 0.115.
    [0002]
    2. Ink according to claim 1, wherein the mass ratio between the ionomer and the nanoparticles of metal oxide (s) semiconductor P type is between 0.01 and 0.055.
    [0003]
    An ink according to any of claims 1 or 2, wherein the P-type semiconductor metal oxide nanoparticles are selected from V205, NiO, Mo03, WO3 and mixtures thereof.
    [0004]
    An ink according to any one of the preceding claims, wherein the P-type semiconductor metal oxide nanoparticles are formed wholly or in part of W03.
    [0005]
    An ink according to any one of the preceding claims, wherein the ionomer is a perfluorosulfonated copolymer, in particular a sulfonated tetrafluoroethylene copolymer, and more particularly a tetrafluoroethylene backbone copolymer comprising perfluorovinyl ether groups and whose terminal ends are functionalized. by sulphonate groups or sulphonic acid functions.
    [0006]
    An ink according to any one of the preceding claims, further comprising an alcoholic solvent, in particular a lower alcohol, preferably a C 2 -C 4 lower monoalcohol, and in particular ethanol, n-propanol, isopropanol, n-butanol, 2-butanol or methylpropanol.
    [0007]
    7. P-type layer of an organic electronic device, characterized in that it comprises at least nanoparticles of metal oxide (s) P-type semiconducting and an ionomer, the mass ratio between the ionomer and the nanoparticles of metal oxide (s) semiconductor P type being between 0.005 and 0.115, and preferably between 0.01 and 0.055.
    [0008]
    The layer of claim 7, wherein the P-type semiconductor metal oxide nanoparticles are selected from V205, NiO, MoO3, WO3 and mixtures thereof, and preferably are formed in all or part of WO3
    [0009]
    9. Layer according to any one of claims 7 or 8, wherein the ionomer is a perfluorosulfonated copolymer, in particular a sulfonated tetrafluoroethylene copolymer, and more particularly a tetrafluoroethylene backbone copolymer comprising perfluorovinyl ether groups and whose terminal ends are functionalized with sulfonate groups or sulfonic acid functions.
    [0010]
    10. Organic electronic device, characterized in that it comprises a P type layer as defined according to any one of claims 7 to 9.
    [0011]
    11. Organic electronic device according to claim 10, characterized in that it has a standard structure or a reverse structure.
    [0012]
    12. Organic electronic device according to any one of claims 10 or 11, characterized in that it is an organic photovoltaic cell, an organic light-emitting diode (OLED) or an organic photodetector ( OPD).
    [0013]
    13. A method of forming an organic electronic device, characterized in that it comprises a step of depositing an ink layer as defined according to any one of claims 1 to 6 under conditions conducive to the formation of a P type layer.
    [0014]
    14. Use of nanoparticles of WO3 for forming a P-type layer in an organic electronic device, characterized in that said nanoparticles are formulated with at least one ionomer in said P-type layer in an ionomeric / nanoparticles mass ratio of WO 3 included between 0.005 and 0.115.
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    WO2015079378A1|2015-06-04|
    FR3013719B1|2018-01-12|
    US10174216B2|2019-01-08|
    EP3074471A1|2016-10-05|
    KR20160090858A|2016-08-01|
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    法律状态:
    2015-11-30| PLFP| Fee payment|Year of fee payment: 3 |
    2016-11-30| PLFP| Fee payment|Year of fee payment: 4 |
    2017-11-29| PLFP| Fee payment|Year of fee payment: 5 |
    2019-11-29| PLFP| Fee payment|Year of fee payment: 7 |
    2020-11-30| PLFP| Fee payment|Year of fee payment: 8 |
    2021-11-30| PLFP| Fee payment|Year of fee payment: 9 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1361621|2013-11-26|
    FR1361621A|FR3013719B1|2013-11-26|2013-11-26|INK FOR FORMING P-LAYERS IN ORGANIC ELECTRONIC DEVICES|FR1361621A| FR3013719B1|2013-11-26|2013-11-26|INK FOR FORMING P-LAYERS IN ORGANIC ELECTRONIC DEVICES|
    KR1020167016890A| KR20160090858A|2013-11-26|2014-11-25|Ink for forming P layers in organic electronic devices|
    EP14812650.1A| EP3074471A1|2013-11-26|2014-11-25|Ink for forming p layers in organic electronic devices|
    US15/039,158| US10174216B2|2013-11-26|2014-11-25|Ink for forming P layers in organic electronic devices|
    PCT/IB2014/066313| WO2015079378A1|2013-11-26|2014-11-25|Ink for forming p layers in organic electronic devices|
    JP2016534160A| JP2017505531A|2013-11-26|2014-11-25|Ink for forming a P layer in an organic electronic device|
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